SIZ730DT-T1-GE3
MOSFET 2N-CH 30V 16A 6PWRPAIRManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SIZ730DT-T1-GE3 is a 30V dual N-channel MOSFET array designed for power management applications. This component, packaged in a 6-PowerPair™ configuration, offers continuous drain currents of 16A and 35A at 25°C, with maximum power dissipation ratings of 27W and 48W respectively. Key electrical characteristics include a low on-resistance of 9.3mOhm at 15A and 10V, and a logic-level gate for enhanced drive flexibility. The device features a gate charge of 24nC at 10V and an input capacitance of 830pF at 15V. Operating across a temperature range of -55°C to 150°C, the SIZ730DT-T1-GE3 is suitable for use in automotive, industrial, and consumer electronics sectors requiring efficient power switching. The component is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerPair™ |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 27W, 48W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 16A, 35A |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 15V |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 6-PowerPair™ |
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