SIZ728DT-T1-GE3
MOSFET 2N-CH 25V 16A 6PWRPAIRManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® series SIZ728DT-T1-GE3 is a 25V N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 6-PowerPair™ surface mount package, suitable for compact designs. Each channel offers a continuous drain current capability of 16A and 35A, with a maximum power dissipation of 27W and 48W respectively. The low Rds(on) of 7.7mOhm at 18A and 10V, combined with a logic level gate, ensures optimal performance and reduced conduction losses. Key electrical parameters include a Vgs(th) max of 2.2V at 250µA and a gate charge Qg of 26nC at 10V. The Vishay Siliconix SIZ728DT-T1-GE3 is utilized in industries such as automotive, industrial, and consumer electronics for power management solutions. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerPair™ |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 27W, 48W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 16A, 35A |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 12.5V |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 18A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 6-PowerPair™ |
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