SIZ720DT-T1-GE3
MOSFET 2N-CH 20V 16A 6POWERPAIRManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SIZ720DT-T1-GE3 is a dual N-channel MOSFET array from the TrenchFET® series, featuring a 20V drain-source breakdown voltage. This 6-PowerPair™ surface mount device offers a continuous drain current capability of 16A at 25°C, with a maximum power dissipation of 27W or 48W. Key electrical parameters include a low on-resistance of 8.7mOhm at 16.8A and 10V, a gate charge (Qg) of 23nC at 10V, and an input capacitance (Ciss) of 825pF at 10V. The MOSFET utilizes logic-level gate technology and has a threshold voltage (Vgs(th)) of 2V at 250µA. Operating across a temperature range of -55°C to 150°C, this component is supplied in a Tape & Reel package. Its configuration as a half-bridge array makes it suitable for applications in power management, automotive systems, and industrial power supplies.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 63 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerPair™ |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 27W, 48W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 16A |
| Input Capacitance (Ciss) (Max) @ Vds | 825pF @ 10V |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 16.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 6-PowerPair™ |
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