SIZ710DT-T1-GE3
MOSFET 2N-CH 20V 16A 6PWRPAIRManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Vishay Siliconix SIZ710DT-T1-GE3 is a TrenchFET® power MOSFET array featuring two N-channel devices in a 6-PowerPair™ package. This device offers a 20V drain-source voltage rating and supports continuous drain currents of up to 16A and 35A at 25°C, with power dissipation ratings of 27W and 48W respectively. Optimized for high efficiency, it exhibits a low on-resistance of 6.8mOhm at 19A and 10V. The MOSFET array includes logic-level gate drive capability, with a maximum gate charge of 18nC at 10V and input capacitance of 820pF at 10V. Operating across a temperature range of -55°C to 150°C, this component is suitable for applications in power management, battery charging, and consumer electronics. The SIZ710DT-T1-GE3 is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerPair™ |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 27W, 48W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 16A, 35A |
| Input Capacitance (Ciss) (Max) @ Vds | 820pF @ 10V |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 19A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 6-PowerPair™ |
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