SIZ704DT-T1-GE3
MOSFET 2N-CH 30V 12A 6PWRPAIRManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SIZ704DT-T1-GE3 is a 30V N-channel MOSFET array featuring two independent MOSFETs in a single 6-PowerPair™ package. This device offers continuous drain current ratings of 12A and 16A at 25°C, with a maximum power dissipation of 20W and 30W respectively. The low Rds(on) of 24mOhm at 7.8A and 10V Vgs, coupled with a logic level gate, makes it suitable for high-efficiency power switching applications. Key parameters include a gate charge (Qg) of 12nC (max) at 10V and input capacitance (Ciss) of 435pF (max) at 15V. The Vishay Siliconix SIZ704DT-T1-GE3 operates within a temperature range of -55°C to 150°C (TJ) and is supplied in a Tape & Reel (TR) package for surface mounting. This component finds application in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerPair™ |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 20W, 30W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 12A, 16A |
| Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 15V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 6-PowerPair™ |
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