SIZ700DT-T1-GE3
MOSFET 2N-CH 20V 16A 6POWERPAIRManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series SIZ700DT-T1-GE3 is a 20V, 2 N-Channel MOSFET array in a 6-PowerPair™ surface mount package. This device offers a continuous drain current of 16A at 25°C with a low Rds(on) of 8.6mOhm at 15A and 10V. Key parameters include a gate charge of 35nC at 10V and input capacitance of 1300pF at 10V. The SIZ700DT-T1-GE3 operates within a temperature range of -55°C to 150°C. This MOSFET array is suitable for power management applications in sectors such as automotive and industrial systems. It is supplied on tape and reel (TR).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerPair™ |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.36W, 2.8W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 16A |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 10V |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 6-PowerPair™ |