SIZ342DT-T1-GE3
MOSFET 2N-CH 30V 15.7A 8PWR33Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SIZ342DT-T1-GE3 is a dual N-channel MOSFET from the TrenchFET® series. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 15.7A at 25°C ambient or 100A at 25°C case temperature. It offers a low on-resistance of 11.5mOhm maximum at 14A and 10V gate-source voltage. The device has a gate charge (Qg) of 20nC maximum and input capacitance (Ciss) of 650pF maximum. Packaged in an 8-Power33 (3x3) surface-mount configuration, it dissipates a maximum power of 3.6W or 4.3W and operates between -55°C and 150°C. This MOSFET array is commonly employed in automotive and industrial power management applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | - |
| Power - Max | 3.6W, 4.3W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 15.7A (Ta), 100A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 15V |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 14A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-Power33 (3x3) |