SIZ342ADT-T1-GE3
MOSFET 2N-CH 30V 15.7A 8PWR33Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SIZ342ADT-T1-GE3 is a TrenchFET® Gen IV power MOSFET array featuring two N-channel devices in a compact 8-Power33 (3x3) surface mount package. This component offers a Drain-to-Source Voltage (Vdss) of 30V. Continuous drain current capabilities are rated at 15.7A at ambient temperature (Ta) and 33.4A at case temperature (Tc). The device exhibits a low on-resistance of 9.4mOhm at 10A and 10V. Gate charge (Qg) is specified at a maximum of 12.2nC at 10V, with input capacitance (Ciss) at 580pF maximum at 15V. The Vishay Siliconix SIZ342ADT-T1-GE3 is suitable for applications requiring high efficiency and power density, commonly found in power management, automotive, and industrial systems. It operates within a temperature range of -55°C to 150°C (TJ) and is supplied in Digi-Reel® packaging.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.7W (Ta), 16.7W (Tc) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 15.7A (Ta), 33.4A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 15V |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12.2nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-Power33 (3x3) |
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