SIZ340ADT-T1-GE3
MOSFET 2N-CH 30V 15.7A 8PWR33Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series SIZ340ADT-T1-GE3 is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This device features a 30V drain-to-source voltage (Vdss) and offers continuous drain current capabilities of 15.7A at 25°C ambient (Ta) and up to 69.7A at 25°C case (Tc). The low on-resistance, with values of 9.4mOhm at 10A, 10V and 4.29mOhm at 20A, 10V, minimizes conduction losses. The SIZ340ADT-T1-GE3 is housed in a compact 8-Power33 (3x3) surface-mount package, suitable for demanding thermal management. Key parameters include a gate charge (Qg) of 12.2nC and 27.9nC (max) at 10V, and input capacitance (Ciss) of 580pF and 1290pF (max) at 15V. Its robust design makes it suitable for use in automotive, industrial, and consumer electronics markets. The component operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 15V, 1290pF @ 15V |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12.2nC @ 10V, 27.9nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-Power33 (3x3) |
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