SIZ328DT-T1-GE3
MOSFET 2N-CH 25V 8PWR33Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SIZ328DT-T1-GE3 is a TrenchFET® Gen IV series dual N-channel MOSFET array designed for efficient power management. This device features a 25V Drain-to-Source voltage (Vdss) and offers low on-resistance with typical values of 15mO at 5A, 10V and 10mO at 5A, 10V. Continuous drain current capabilities are rated at 11.1A (Ta) / 25.3A (Tc) and 15A (Ta) / 30A (Tc), with maximum power dissipation of 2.9W (Ta) / 15W (Tc) and 3.6W (Ta) / 16.2W (Tc) respectively. The MOSFETs utilize a compact 8-Power33 (3x3) surface mount package, ideal for space-constrained applications. Key electrical parameters include input capacitance (Ciss) up to 600pF at 10V and gate charge (Qg) up to 11.3nC at 10V. Operating temperature range is -55°C to 150°C. This component is commonly utilized in automotive, industrial, and computing applications requiring high-efficiency switching.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 325pF @ 10V, 600pF @ 10V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9nC @ 10V, 11.3nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-Power33 (3x3) |
Request a Quote
Clients Also Buy
SISA24DN-T1-GE3
MOSFET N-CH 25V 60A PPAK1212-8
SISS06DN-T1-GE3
MOSFET N-CH 30V 47.6/172.6A PPAK
SIRA58ADP-T1-RE3
MOSFET N-CH 40V 32.3A/109A PPAK
