SIZ320DT-T1-GE3
MOSFET 2N-CH 25V 30A/40A 8PWR33Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SIZ320DT-T1-GE3 is a 25V, 2 N-Channel MOSFET array from the PowerPAIR®, TrenchFET® series. This device features a compact 8-Power33 (3x3) surface mount package. It offers continuous drain current ratings of 30A and 40A (Tc) with maximum power dissipation of 16.7W and 31W, respectively. Key characteristics include low on-resistance, with Rds On specified at 8.3mOhm @ 8A, 10V and 4.24mOhm @ 10A, 10V. Gate charge (Qg) is 8.9nC and 11.9nC at 4.5V, with input capacitance (Ciss) at 660pF and 1370pF at 12.5V. The Vishay Siliconix SIZ320DT-T1-GE3 is suitable for high-efficiency power management applications in automotive and industrial sectors. It operates across a temperature range of -55°C to 150°C (TJ) and is supplied in Digi-Reel® packaging.
Additional Information
Series: PowerPAIR®, TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 16.7W, 31W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc), 40A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 12.5V, 1370pF @ 12.5V |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.9nC @ 4.5V, 11.9nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-Power33 (3x3) |
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