SIZ200DT-T1-GE3
MOSFET 2N-CH 30V 22A 8POWERPAIRManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® Gen IV SIZ200DT-T1-GE3 is a dual N-channel MOSFET array designed for high-efficiency power conversion. This component features a 30V drain-source voltage rating and offers exceptionally low on-resistance, with a maximum of 5.5mOhm at 10A, 10V for one channel and 5.8mOhm for the other. It boasts continuous drain current capabilities of 22A at ambient temperature and up to 61A at case temperature, dissipating up to 33W at case temperature. The 8-PowerPair® package (3.3x3.3mm) facilitates high power density and efficient thermal management. Key parameters include a gate charge (Qg) of 28nC and 30nC respectively, with input capacitance (Ciss) up to 1600pF. Operating across a temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in automotive, industrial power supplies, and battery management systems.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 4.3W (Ta), 33W (Tc) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1510pF @ 15V, 1600pF @ 15V |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V, 30nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-PowerPair® (3.3x3.3) |
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