SIS902DN-T1-GE3
MOSFET 2N-CH 75V 4A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SIS902DN-T1-GE3 is a PowerPAK® 1212-8 Dual package MOSFET array featuring two N-channel devices. This component offers a Drain-to-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 4A at 25°C, with a maximum power dissipation of 15.4W. The Rds(On) is rated at a maximum of 186mOhm at 3A and 10V. Key parameters include a Gate Charge (Qg) of 6nC (max) at 10V and an Input Capacitance (Ciss) of 175pF (max) at 38V. The device operates across a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in power management, automotive, and industrial sectors requiring efficient switching and robust performance. The SIS902DN-T1-GE3 is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 15.4W |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 38V |
| Rds On (Max) @ Id, Vgs | 186mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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