SIRB40DP-T1-GE3
MOSFET 2N-CH 40V 40A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SIRB40DP-T1-GE3 TrenchFET® MOSFET array, featuring two N-channel devices in a PowerPAK SO-8 Dual package. This component offers a Vdss of 40V and a continuous drain current capability of 40A (Tc), with a maximum power dissipation of 46.2W. The SIRB40DP-T1-GE3 exhibits a low Rds(On) of 3.25mOhm at 10A and 10V, coupled with a gate charge (Qg) of 45nC at 4.5V and input capacitance (Ciss) of 4290pF at 20V. Designed for surface mounting, this device operates across a temperature range of -55°C to 150°C. It is commonly utilized in automotive and industrial power management applications. Supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 46.2W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 4290pF @ 20V |
| Rds On (Max) @ Id, Vgs | 3.25mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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