SIF912EDZ-T1-E3
MOSFET 2N-CH 30V 7.4A PPAKManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SIF912EDZ-T1-E3 is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 7.4A at 25°C. The low on-resistance of 19mOhm at 7.4A, 4.5V, coupled with a logic-level gate drive, ensures efficient operation in demanding power management circuits. The PowerPAK® 2x5 package enables compact and robust surface-mount designs, suitable for automotive, industrial, and consumer electronics sectors. Key parameters include a maximum power dissipation of 1.6W and a gate charge of 15nC at 4.5V. The device operates across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 2x5 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 7.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® (2x5) |
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