SIB914DK-T1-GE3
MOSFET 2N-CH 8V 1.5A SC75-6LManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SIB914DK-T1-GE3 is a TrenchFET® series dual N-channel MOSFET array. This device features a Drain-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 1.5A at 25°C. The Rds On is specified at a maximum of 113mOhm at 2.5A and 4.5V. Key parameters include Gate Charge (Qg) of 2.6nC (max) at 5V and Input Capacitance (Ciss) of 125pF (max) at 4V. The MOSFET array is housed in a PowerPAK® SC-75-6L Dual package, suitable for surface mounting. It offers a maximum power dissipation of 3.1W and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in portable electronics and battery management applications requiring efficient switching. The Vishay Siliconix SIB914DK-T1-GE3 is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6L Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 125pF @ 4V |
| Rds On (Max) @ Id, Vgs | 113mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.6nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6L Dual |
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