SIB911DK-T1-GE3
MOSFET 2P-CH 20V 2.6A SC75-6LManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SIB911DK-T1-GE3 features a dual P-channel MOSFET array with a 20V drain-source voltage rating and a continuous drain current capability of 2.6A per channel at 25°C. This TrenchFET® series component is housed in a PowerPAK® SC-75-6L Dual surface-mount package, offering 3.1W of maximum power dissipation. Key electrical parameters include a maximum on-resistance of 295mOhm at 1.5A and 4.5V Vgs, a gate charge of 4nC (max) at 8V, and input capacitance of 115pF (max) at 10V. The device operates across a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in automotive and industrial sectors requiring efficient power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6L Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 115pF @ 10V |
| Rds On (Max) @ Id, Vgs | 295mOhm @ 1.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 8V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6L Dual |
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