SIA936EDJ-T1-GE3
MOSFET 2N-CH 20V 4.5A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SIA936EDJ-T1-GE3, offers a dual 2 N-channel configuration with a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C. This device features a logic-level gate and a maximum power dissipation of 7.8W. The on-resistance (Rds On) is specified at 34mOhm maximum at 4A, 4.5V. With a gate charge (Qg) of 17nC at 10V and a threshold voltage (Vgs(th)) of 1.3V at 250µA, this MOSFET array is suitable for power management applications. The SIA936EDJ-T1-GE3 is housed in a PowerPAK® SC-70-6 Dual surface mount package, supplied on tape and reel. It operates across a temperature range of -55°C to 150°C. This component is commonly found in portable electronics, consumer devices, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 7.8W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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