SIA928DJ-T1-GE3
MOSFET 2N-CH 30V 4.5A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series MOSFET array, part number SIA928DJ-T1-GE3, features two N-channel devices in a PowerPAK® SC-70-6 Dual package. This surface mount component offers a 30V drain-to-source voltage and a continuous drain current of 4.5A (Tc) with a maximum power dissipation of 7.8W. The device exhibits a low Rds(On) of 25mOhm at 5A, 10V, and a gate charge of 4.5nC at 4.5V. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET array is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 7.8W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 15V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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