SIA922EDJ-T4-GE3
MOSFET 2N-CH 30V 4.4A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SIA922EDJ-T4-GE3, features two N-Channel MOSFETs in a PowerPAK® SC-70-6 Dual package. This surface mount device offers a 30V drain-to-source voltage and continuous drain current capabilities of 4.4A at ambient temperature and 4.5A at case temperature. With a maximum power dissipation of 1.9W (Ta) and 7.8W (Tc), this MOSFET array is suitable for applications requiring efficient power switching. Key electrical parameters include a maximum Rds(On) of 64mOhm at 3A and 4.5V, and a gate charge of 12nC at 10V. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power management, battery charging, and consumer electronics. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.9W (Ta), 7.8W (Tc) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta), 4.5A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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