SIA922EDJ-T1-GE3
MOSFET 2N-CH 30V 4.5A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Vishay Siliconix TrenchFET® SIA922EDJ-T1-GE3 is a dual N-channel MOSFET array packaged in a PowerPAK® SC-70-6 Dual. This surface mount component offers a 30V drain-to-source voltage and a continuous drain current capability of 4.5A at 25°C, with a maximum power dissipation of 7.8W. Featuring logic-level gate drive, the SIA922EDJ-T1-GE3 exhibits a low Rds(on) of 64mOhm at 3A and 4.5V, and a gate charge of 12nC maximum at 10V. The threshold voltage (Vgs(th)) is specified at 1.4V maximum for 250µA. This device is suitable for applications in the automotive and industrial sectors, and is supplied in Tape & Reel packaging. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 7.8W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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