SIA920DJ-T1-GE3
MOSFET 2N-CH 8V 4.5A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET array, part number SIA920DJ-T1-GE3, offers a dual 2-channel configuration with 8V drain-source voltage (Vdss) and 4.5A continuous drain current (Id) at 25°C. This device features a logic level gate and a low on-resistance (Rds On) of 27mOhm maximum at 5.3A and 4.5V Vgs. The SIA920DJ-T1-GE3 utilizes advanced MOSFET technology in a PowerPAK® SC-70-6 Dual surface mount package, providing a maximum power dissipation of 7.8W. Key parameters include a gate charge (Qg) of 7.5nC maximum at 4.5V Vgs and input capacitance (Ciss) of 470pF maximum at 4V Vds. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in consumer electronics and power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 7.8W |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 4V |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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