SIA915DJ-T4-GE3
MOSFET 2P-CH 30V 3.7A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SIA915DJ-T4-GE3 is a TrenchFET® series dual P-channel MOSFET array. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 3.7A at 25°C ambient, or 4.5A at 25°C case temperature. The maximum power dissipation is rated at 1.9W (Ta) and 6.5W (Tc). Key electrical characteristics include a typical gate charge (Qg) of 9nC and input capacitance (Ciss) of 275pF at specified voltage conditions. On-resistance (Rds On) is a maximum of 87mOhm at 2.9A and 10V. The SIA915DJ-T4-GE3 is housed in a PowerPAK® SC-70-6 Dual surface mount package and operates across a temperature range of -55°C to 150°C. This component finds application in power management, automotive, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.9W (Ta), 6.5W (Tc) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta), 4.5A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 275pF @ 15V |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 2.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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