SIA915DJ-T1-GE3
MOSFET 2P-CH 30V 4.5A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® Dual P-Channel MOSFET, part number SIA915DJ-T1-GE3, offers a 30V drain-source voltage and 4.5A continuous drain current at 25°C. This device features a low Rds(on) of 87mOhm at 2.9A and 10V, with a gate threshold voltage of 2.2V at 250µA. Its 9nC maximum gate charge and 275pF input capacitance are specified at 10V and 15V respectively. The MOSFET is housed in a PowerPAK® SC-70-6 Dual package, a surface mount solution designed for efficient thermal management and high power density, rated for 6.5W. This component is suitable for applications in automotive, industrial, and consumer electronics requiring compact, high-performance power switching. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 6.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 275pF @ 15V |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 2.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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