SIA914DJ-T1-E3
MOSFET 2N-CH 20V 4.5A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series SIA914DJ-T1-E3 is a dual N-channel MOSFET array designed for efficient power switching applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 4.5A at 25°C. The low Rds(on) of 53mOhm at 3.7A and 4.5V gate-source voltage, coupled with a 6.5W maximum power dissipation, makes it suitable for demanding power management tasks. Its logic-level gate drive simplifies integration with low-voltage control signals. The SIA914DJ-T1-E3 is housed in a compact PowerPAK® SC-70-6 Dual surface-mount package, ideal for space-constrained designs in automotive, industrial, and consumer electronics. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 6.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 10V |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 3.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 8V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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