SIA913DJ-T1-GE3
MOSFET 2P-CH 12V 4.5A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® Series SIA913DJ-T1-GE3 is a dual P-channel MOSFET power device. This surface mount component features a 12V drain-source voltage rating and a continuous drain current capability of 4.5A at 25°C. The device offers a low on-resistance of 70mOhm maximum at 3.3A, 4.5V, and a maximum power dissipation of 6.5W. Key electrical parameters include a gate charge of 12nC maximum at 8V and input capacitance of 400pF maximum at 6V. The SIA913DJ-T1-GE3 is housed in a PowerPAK® SC-70-6 Dual package and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in power management applications within the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 6.5W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 6V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 8V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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