SIA912DJ-T1-GE3
MOSFET 2N-CH 12V 4.5A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series SIA912DJ-T1-GE3 is a dual N-channel MOSFET array designed for power management applications. This device features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C, with a maximum power dissipation of 6.5W. The on-resistance (Rds On) is specified at 40mOhm maximum at 4.2A and 4.5V gate-source voltage (Vgs). It incorporates a logic-level gate feature for direct interface with low-voltage control signals. Key parameters include a maximum gate charge (Qg) of 11.5nC at 8V and a maximum input capacitance (Ciss) of 400pF at 6V. The MOSFET array is housed in a PowerPAK® SC-70-6 Dual surface-mount package, supplied on tape and reel. Operating temperature ranges from -55°C to 150°C. This component is commonly employed in automotive, industrial, and consumer electronics for efficient power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 6.5W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 6V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 8V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |