SIA911EDJ-T1-GE3
MOSFET 2P-CH 20V 4.5A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SIA911EDJ-T1-GE3 is a dual P-channel MOSFET array. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 4.5A at 25°C. The on-resistance (Rds On) is a maximum of 101mOhm at 2.7A and 4.5V, with a gate charge (Qg) of 11nC at 8V. The MOSFET array is designed with a logic level gate for compatibility with lower gate drive voltages. Packaged in the PowerPAK® SC-70-6 Dual, this surface mount component offers a maximum power dissipation of 7.8W. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in battery management, load switching, and power sequencing within the consumer electronics and industrial sectors. The device is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 7.8W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 101mOhm @ 2.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 8V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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