SIA911DJ-T1-GE3
MOSFET 2P-CH 20V 4.5A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SIA911DJ-T1-GE3 is a dual P-channel MOSFET array designed for efficient power management. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 4.5A at 25°C, with a maximum power dissipation of 6.5W. Its low on-resistance is specified as 94mOhm at 2.8A and 4.5V, and it exhibits a gate charge (Qg) of 12.8nC at 8V and input capacitance (Ciss) of 355pF at 10V. The MOSFET array is housed in a compact PowerPAK® SC-70-6 Dual surface mount package, suitable for demanding applications. Operating temperature ranges from -55°C to 150°C. This component finds utility in various industries, including consumer electronics, industrial automation, and automotive systems requiring high-density power switching. The Vishay Siliconix SIA911DJ-T1-GE3 is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 6.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 355pF @ 10V |
| Rds On (Max) @ Id, Vgs | 94mOhm @ 2.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 12.8nC @ 8V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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