SIA907EDJT-T1-GE3
MOSFET 2P-CH 20V 4.5A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix TrenchFET® SIA907EDJT-T1-GE3 is a dual P-channel MOSFET array featuring a 20V drain-to-source voltage rating. This device offers a continuous drain current of 4.5A (Tc) at 25°C and a maximum power dissipation of 7.8W. Designed with a logic level gate, it presents a low on-resistance of 57mOhm maximum at 3.6A and 4.5V Vgs. The threshold voltage (Vgs(th)) is a maximum of 1.4V at 250µA. With a gate charge (Qg) of 23nC maximum at 10V, this MOSFET array is suitable for applications requiring efficient switching. The SIA907EDJT-T1-GE3 is housed in a PowerPAK® SC-70-6 Dual package for surface mounting and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in automotive and industrial applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 7.8W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 3.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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