SIA907EDJ-T1-GE3
MOSFET N-CH 30V SMDManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SIA907EDJ-T1-GE3 is an N-channel MOSFET array designed for advanced power management applications. This component is fabricated using Vishay's TrenchFET® technology, offering superior on-resistance and charge characteristics for enhanced efficiency. The SIA907EDJ-T1-GE3 is suitable for use in demanding sectors such as automotive, industrial automation, and high-performance computing, where reliable and efficient power switching is critical. Its robust design and advanced semiconductor fabrication ensure excellent thermal performance and long-term reliability in challenging operational environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | - |
| Mounting Type | - |
| Configuration | - |
| Operating Temperature | - |
| Technology | - |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | - |
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