SIA778DJ-T1-GE3
MOSFET 2N-CH 12V 4.5A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET array, part number SIA778DJ-T1-GE3, offers a dual N-channel configuration with Drain-Source voltages of 12V and 20V. This device features a low Rds(on) of 29mOhm at 5A, 4.5V, and a logic-level gate for efficient switching. Continuous drain current capabilities are 4.5A and 1.5A respectively. The array is housed in a compact PowerPAK® SC-70-6 Dual surface mount package, designed for demanding applications in the automotive and industrial sectors. Maximum power dissipation per channel is 6.5W and 5W. Key parameters include a gate charge (Qg) of 15nC (max) at 8V and input capacitance (Ciss) of 500pF (max) at 6V. Operating temperature range is from -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 6.5W, 5W |
| Drain to Source Voltage (Vdss) | 12V, 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A, 1.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 6V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 8V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
