SIA513DJ-T1-GE3
MOSFET N/P-CH 20V 4.5A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SIA513DJ-T1-GE3, features a dual N-channel and P-channel configuration within a PowerPAK® SC-70-6 Dual package. This surface mount device offers a 20V drain-to-source voltage and a continuous drain current of 4.5A at 25°C, dissipating up to 6.5W. Key specifications include a maximum on-resistance of 60mOhm at 3.4A and 4.5V, a gate charge of 12nC, and input capacitance of 360pF, both at 10V. The logic level gate design and operating temperature range of -55°C to 150°C make it suitable for applications in consumer electronics and power management. This component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 6.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |