SI9945BDY-T1-GE3
MOSFET 2N-CH 60V 5.3A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI9945BDY-T1-GE3 is a TrenchFET® series power MOSFET array featuring two N-channel devices. This surface-mount component, housed in an 8-SOIC package, offers a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.3A at 25°C. It has a maximum power dissipation of 3.1W and a low on-resistance (Rds On) of 58mOhm at 4.3A and 10V. The device operates with a logic level gate and has a typical gate charge (Qg) of 20nC at 10V. This MOSFET array is suitable for applications in automotive, industrial, and consumer electronics requiring efficient switching and power management. The component is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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