SI9945AEY-T1
MOSFET 2N-CH 60V 3.7A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI9945AEY-T1 is a TrenchFET® series dual N-channel MOSFET array. This surface mount device offers a 60V drain-to-source voltage and a continuous drain current of 3.7A at 25°C. With a low on-resistance of 80mOhm maximum at 3.7A and 10V, it dissipates a maximum power of 2.4W. The device features a logic-level gate, requiring a 10V gate-source voltage for its maximum gate charge of 20nC. The 8-SOIC package (0.154" width) is supplied on tape and reel. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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