SI9936BDY-T1-GE3
MOSFET 2N-CH 30V 4.5A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI9936BDY-T1-GE3 is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C. The device offers a low on-resistance of 35mOhm at 6A and 10V (Vgs), ensuring minimal power loss during operation.
The SI9936BDY-T1-GE3 utilizes MOSFET technology with a logic-level gate, facilitating direct control with low-voltage microcontrollers. Its 8-SOIC package (0.154" width) is suitable for surface mounting, and it is supplied on a tape and reel for automated assembly. With a maximum power dissipation of 1.1W and an operating temperature range of -55°C to 150°C, this component is robust for demanding environments. Applications include power management, battery charging, and motor control in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |