SI9934BDY-T1-GE3
MOSFET 2P-CH 12V 4.8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI9934BDY-T1-GE3 is a dual P-channel MOSFET array designed for efficient power switching applications. This 12V device features a continuous drain current (Id) of 4.8A at 25°C and a low on-resistance (Rds On) of 35mOhm maximum at 6.4A, 4.5V. The logic level gate capability simplifies drive requirements. With a maximum power dissipation of 1.1W and a junction temperature range of -55°C to 150°C, it is suitable for demanding environments. The device is packaged in an 8-SOIC (0.154", 3.90mm Width) and supplied on tape and reel (TR). Applications include power management, battery charging, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
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