SI9933BDY-T1-E3
MOSFET 2P-CH 20V 3.6A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI9933BDY-T1-E3 is a dual P-channel MOSFET array designed for efficient power switching applications. This component features a 20V drain-to-source voltage rating and a continuous drain current capability of 3.6A, with a maximum on-resistance of 60mOhm at 4.7A and 4.5V Vgs. The logic-level gate input simplifies interface requirements with lower voltage control circuitry. Housed in an 8-SOIC package, this surface-mount device is suitable for high-density board designs and operates across a temperature range of -55°C to 150°C. Its 1.1W power dissipation capability and 9nC gate charge make it a viable option for battery management, power distribution, and general-purpose switching in portable electronics and automotive systems. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
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