SI9926BDY-T1-GE3
MOSFET 2N-CH 20V 6.2A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET array, part number SI9926BDY-T1-GE3, offers a 20V drain-source voltage and 6.2A continuous drain current. This dual N-channel device features a low Rds(on) of 20mOhm at 8.2A and 4.5V Vgs, and a logic level gate for enhanced compatibility. The 8-SOIC package facilitates efficient surface mounting and is supplied on tape and reel. Key parameters include a maximum gate charge of 20nC at 4.5V and a threshold voltage of 1.5V at 250µA. With a power dissipation of 1.14W and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.14W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |