SI9926BDY-T1-E3
MOSFET 2N-CH 20V 6.2A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET array, part number SI9926BDY-T1-E3, features two N-channel MOSFETs in a 2 N-Channel configuration. This device boasts a Drain-to-Source voltage (Vdss) of 20V and can handle a continuous Drain current (Id) of 6.2A at 25°C. The MOSFETs offer a low on-resistance (Rds On) of 20mOhm at 8.2A and 4.5V, with a logic level gate sensitivity. Designed for surface mounting, it is housed in an 8-SOIC package with a width of 3.90mm. The maximum power dissipation is 1.14W, and it operates across a temperature range of -55°C to 150°C. Its typical applications include power management and high-efficiency switching in consumer electronics and industrial automation. This component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.14W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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