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SI8904EDB-T2-E1

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SI8904EDB-T2-E1

MOSFET 2N-CH 30V 3.8A 6MICROFOOT

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI8904EDB-T2-E1 is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3.8A at 25°C. The MOSFET array is constructed using Vishay's advanced TrenchFET® technology, offering low on-resistance characteristics crucial for minimizing conduction losses. The SI8904EDB-T2-E1 is housed in a compact 6-Micro Foot™ (2.36x1.56) CSP package, ideal for space-constrained designs. Its surface mount configuration and 1W maximum power dissipation support demanding thermal management. The component is verified for logic-level gate drive, enabling operation with lower gate voltages. Key applications include power management in consumer electronics, industrial automation, and automotive systems where efficient power conversion is paramount. The device is supplied on tape and reel (TR) for automated assembly processes.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-MICRO FOOT®CSP
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Common Drain
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.8A
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs-
Gate Charge (Qg) (Max) @ Vgs-
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.6V @ 250µA
Supplier Device Package6-Micro Foot™ (2.36x1.56)

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