SI8901EDB-T2-E1
MOSFET 2P-CH 20V 3.5A 6MICROFOOTManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI8901EDB-T2-E1 is a TrenchFET® series dual P-channel MOSFET. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.5A at 25°C. The MOSFET array is configured with two P-channel devices in a common drain arrangement. It is presented in a 6-Micro Foot™ (2.36x1.56) surface mount package, designed for high-density applications. The device operates with a logic level gate, offering a threshold voltage (Vgs(th)) of 1V at 350µA. With a maximum power dissipation of 1W, this component is suitable for use in power management circuits within the automotive and industrial sectors. The SI8901EDB-T2-E1 is supplied on tape and reel (TR).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-MICRO FOOT®CSP |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 350µA |
| Supplier Device Package | 6-Micro Foot™ (2.36x1.56) |
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