SI7983DP-T1-GE3
MOSFET 2P-CH 20V 7.7A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7983DP-T1-GE3 is a dual P-channel power MOSFET designed for efficient power management. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 7.7A at 25°C. The low on-resistance of 17mOhm at 12A and 4.5V gate drive, coupled with a logic level gate feature, ensures optimal performance in demanding applications. Fabricated using Vishay's advanced TrenchFET® technology, it offers reduced switching losses and improved thermal performance, with a maximum power dissipation of 1.4W. The PowerPAK® SO-8 Dual package provides a compact footprint for surface mounting. Typical applications for this component include DC-DC converters, load switching, and battery management systems in automotive and industrial sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 12A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 74nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 600µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
