SI7983DP-T1-E3
MOSFET 2P-CH 20V 7.7A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7983DP-T1-E3 is a 20V P-channel dual MOSFET array designed for high-efficiency power management applications. This device features a low Rds(on) of 17mOhm at 12A and 4.5V Vgs, contributing to reduced conduction losses. The 7.7A continuous drain current capability and 1.4W maximum power dissipation make it suitable for demanding power switching in consumer electronics, industrial control systems, and automotive applications. The logic-level gate ensures compatibility with a wider range of gate drive signals. Packaged in a PowerPAK® SO-8 Dual, this component offers a compact footprint for surface mounting. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 12A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 74nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 600µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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