SI7980DP-T1-GE3
MOSFET 2N-CH 20V 8A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET Array, part number SI7980DP-T1-GE3, features two N-channel MOSFETs in a PowerPAK® SO-8 Dual package. This device offers a 20V drain-to-source voltage and a continuous drain current of 8A at 25°C. With a low on-resistance of 22mOhm maximum at 5A and 10V, it supports power dissipation up to 21.9W. Key electrical parameters include a gate charge of 27nC maximum at 10V and input capacitance of 1010pF maximum at 10V. The SI7980DP-T1-GE3 is suitable for applications requiring efficient power switching, commonly found in power management, automotive systems, and industrial control. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 19.8W, 21.9W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 10V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
