SI7972DP-T1-GE3
MOSFET 2N-CH 60V 8A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7972DP-T1-GE3 is a dual N-channel MOSFET array offering 60V Vdss and 8A continuous drain current capability at 25°C (Tc). This device features a low 18mOhm maximum Rds On at 11A, 10V, and a maximum gate charge of 11nC at 4.5V. With a maximum power dissipation of 22W and a low input capacitance of 1050pF at 30V, the SI7972DP-T1-GE3 is suitable for high-efficiency power conversion applications. The PowerPAK® SO-8 Dual package facilitates efficient thermal management in a surface mount configuration. This component is commonly utilized in power management, motor control, and battery charging circuits across various industrial and automotive sectors. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 22W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 30V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 11A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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