SI7964DP-T1-GE3
MOSFET 2N-CH 60V 6.1A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7964DP-T1-GE3 is a dual N-channel MOSFET designed for high-efficiency power switching applications. This device features a 60V drain-source voltage rating and a continuous drain current capability of 6.1A at 25°C. The low on-resistance of 23mOhm at 9.6A and 10V gate-source voltage, coupled with a maximum power dissipation of 1.4W, makes it suitable for demanding power management tasks. The MOSFET array is supplied in a PowerPAK® SO-8 Dual package for surface mounting, offering excellent thermal performance. Key electrical parameters include a gate charge (Qg) of 65nC at 10V and a gate threshold voltage (Vgs(th)) of 4.5V at 250µA. This component finds application in automotive, industrial, and consumer electronics sectors requiring robust power switching. The SI7964DP-T1-GE3 is provided in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 9.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |