SI7960DP-T1-E3
MOSFET 2N-CH 60V 6.2A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7960DP-T1-E3 is a dual N-channel MOSFET array designed for efficient power management. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.2A at 25°C. The low on-resistance of 21mOhm at 9.7A and 10V (Rds On) facilitates high-performance switching. With a logic level gate, it offers flexibility in driving circuitry. The PowerPAK® SO-8 Dual surface mount package provides robust thermal performance with a maximum power dissipation of 1.4W. Operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive, industrial, and consumer electronics power conversion.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 9.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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