SI7958DP-T1-E3
MOSFET 2N-CH 40V 7.2A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7958DP-T1-E3 is a PowerPAK® SO-8 Dual MOSFET array featuring two N-channel devices. This component offers a 40V drain-source voltage rating and a continuous drain current capability of 7.2A at 25°C. The device is designed with a logic level gate, and exhibits a maximum Rds(on) of 16.5mOhm at 11.3A and 10V. Key parameters include a typical gate charge of 75nC at 10V and a maximum power dissipation of 1.4W. The SI7958DP-T1-E3 is suitable for surface mounting with an operating temperature range of -55°C to 150°C. This MOSFET array finds application in power management and switching circuits across various industries.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 11.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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