SI7948DP-T1-GE3
MOSFET 2N-CH 60V 3A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7948DP-T1-GE3 is a dual N-channel MOSFET array designed for efficient power switching applications. This device features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C. The low on-resistance (Rds On) of 75mOhm at 4.6A and 10V gate-source voltage (Vgs) minimizes conduction losses. With a logic-level gate, it is compatible with lower voltage control signals. The PowerPAK® SO-8 Dual package offers a compact footprint for surface mounting, suitable for power management in automotive, industrial, and consumer electronics. Its robust thermal performance, with a maximum power dissipation of 1.4W and an operating temperature range of -55°C to 150°C, ensures reliability in demanding environments.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 4.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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